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INTEGRATED CIRCUITS
DATA SHEET
TDA8040T Quadrature demodulator
Objective specification Supersedes data of 1995 Feb 07 File under Integrated Circuits, IC02 1996 Oct 08
Philips Semiconductors
Objective specification
Quadrature demodulator
FEATURES * +5 V supply voltage * Bandgap internal reference voltage * Low crosstalk between I (in-phase) and Q (quadrature) channel outputs * High operating input sensitivity * High Carrier-to-Noise Ratio (CNR) of the VCO. APPLICATIONS * Quadrature Phase Shift Keying (QPSK) demodulation. GENERAL DESCRIPTION The TDA8040T is a monolitic bipolar IC dedicated for quadrature demodulation. QUICK REFERENCE DATA SYMBOL VCC ICC(tot) Vi(RF) fi(RF) VolQ(p-p) E(IQ) EG(IQ) EG(tilt) ct(IQ) IM3 PARAMETER supply voltage total supply current operating input voltage level RF input signal frequency I and Q output voltage (peak-to-peak value) phase error between the I and Q channels gain error between the I and Q channels gain tilt error in the I and Q channels crosstalk between the I and Q channels intermodulation distortion in the I and Q channels VCC = 5 V CONDITIONS MIN. 4.5 70 64 10.7 - - - - 30 40 TYP. 5.0 79 67 - 0.5 - - - - -
TDA8040T
It has been designed to operate in conjunction with the TDA8041H to provide a complete QPSK demodulator. The design of this circuit has been optimized to provide the best quadrature accuracy necessary for digital receiver applications and particularly for digital television. The TDA8040T includes two matched mixers, an RF amplifier, a symmetrical Voltage Controlled Oscillator (VCO), a frequency divider and two matched amplifiers. Two external filters are required for the baseband filtering. The VCO requires an external LC tank circuit with two varicap diodes. This oscillator operates at twice the IF carrier frequency and can be used in a carrier recovery AFC loop.
MAX. 5.5 90 70 150 - 3 1 1 - - V
UNIT mA dBV MHz V deg dB dB dB dB
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA8040T SO16 DESCRIPTION plastic small outline package; 16 leads; body width 3.9 mm VERSION SOT109-1
1996 Oct 08
2
Philips Semiconductors
Objective specification
Quadrature demodulator
BLOCK DIAGRAM
TDA8040T
handbook, full pagewidth
VCC(A)
1
16 15
Iin Iout
AMP I GND(D) 2 3 AMP VOLTAGE REFERENCE 0 AMP
14
VCC(V)
RF A RF B
4 5
13
/2
90
VCOB VCOA
VCO 12
VCC(D) Q GND(A)
6 7 8 AMP
11 AMP 10 9
GND(V) Qout Qin
TDA8040T
MGE511
Fig.1 Block diagram.
1996 Oct 08
3
Philips Semiconductors
Objective specification
Quadrature demodulator
PINNING SYMBOL VCC(A) I GND(D) RF A RF B VCC(D) Q GND(A) Qin Qout GND(V) VCOA VCOB VCC(V) Iout Iin PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION supply voltage for I and Q amplifiers I channel buffer output demodulator ground RF input A RF input B supply voltage for demodulator Q channel buffer output I and Q amplifiers ground Q channel amplifier input Q channel amplifier output VCO ground VCO tank circuit A VCO tank circuit B supply voltage for VCO I channel amplifier output I channel amplifier input
handbook, halfpage
TDA8040T
VCC(A) I GND(D) RF A RF B VCC(D) Q GND(A)
1 2 3 4
16 Iin 15 Iout 14 VCC(V) 13 VCOB
TDA8040T
5 6 7 8
MGE510
12 VCOA 11 GND(V) 10 Qout 9 Qin
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION The QPSK modulated RF signal is applied at the input of a high gain RF amplifier. The amplified signal is then mixed in a pair of mixers with two LO signals, which are 90 degrees out of phase, to produce the in-phase (I) and quadrature (Q) signals. These two signals are separately buffered to drive the external low-pass filters used for the baseband filtering. The I and Q signals are then amplified by two matched amplifiers designed to avoid crosstalk between channels.
The VCO operates at twice the carrier frequency. Its output signal is applied to a frequency divider (divide-by-2) to produce the two LO signals which are 90 degrees out of phase. The VCO is powered from the internal voltage stabilizer to ensure good shift performance.
1996 Oct 08
4
Philips Semiconductors
Objective specification
Quadrature demodulator
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC(A) VCC(D) VCC(V) Vn(max) Imax tsc(max) ZL(IQ) ZLA(IQ) VVCO(p-p) Ptot Tstg Tj Tamb HANDLING PARAMETER supply voltage for I and Q amplifiers supply voltage for demodulator supply voltage for VCO maximum voltage on all pins maximum sink or source current maximum short-circuit time on outputs AC load impedance for I and Q channels AC load impedance for I and Q output amplifiers voltage drive level for external oscillator signal (peak-to-peak value) total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 70 C fi = 15 MHz fi = 15 MHz CONDITIONS MIN. -0.3 -0.3 -0.3 -0.3 - - 35 300 - - -55 - 0
TDA8040T
MAX. +6.0 +6.0 +6.0 VCC 10 10 - - 0.6 500 +150 150 70 V V V V
UNIT
mA s V mW C C C
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE 110 UNIT K/W
1996 Oct 08
5
Philips Semiconductors
Objective specification
Quadrature demodulator
CHARACTERISTICS VCC(A) = VCC(D) = VCC(V) = 5 V; fi(RF) = 70 MHz; fi(VCO) = 140 MHz; Vi(RF) = 67 dBV; Tamb = 25 C; measured in application circuit of Fig.10; unless otherwise specified. SYMBOL Supplies VCC(A) VCC(D) VCC(V) ICC(A) ICC(D) ICC(V) fi(RF)min fi(RF)max Ri(RF) Xi(RF) Vi(RF) Ro(IQ) VolQ(p-p) Gch(IQ) E(IQ) EG(IQ) EG(tilt) NF IM3 supply voltage for I and Q channel amplifier supply voltage for demodulator supply voltage for VCO supply current for I and Q channel amplifier supply current for demodulator supply current for VCO note 1 note 1 note 1 4.75 4.75 4.75 - - - - 150 - - 64 45 note 2 note 3 note 4 note 4 note 5 Zsource = 50 ; note 6 note 7 - 21 - - - - 45 5.0 5.0 5.0 29 16 34 - - 50 5 67 50 85 22.5 - - - 17 - PARAMETER CONDITIONS MIN. TYP.
TDA8040T
MAX.
UNIT
5.25 5.25 5.25 - - -
V V V mA mA mA
QPSK demodulator minimum input IF frequency maximum input IF frequency resistive input impedance reactive input impedance operating input voltage output resistance for I and Q channels output voltage for I and Q channels (peak-to-peak value) I and Q channel gain phase error between I and Q channels gain error between I and Q channels gain tilt error between I and Q channels double sideband noise figure intermodulation distortion in the I and Q channels 10.7 - - - 70 55 - 24 3 0.5 0.8 20 - MHz MHz dBV mV dB deg dB dB dB dB
1996 Oct 08
6
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
SYMBOL
PARAMETER
CONDITIONS -
MIN. - - 6 - -
TYP.
MAX.
UNIT
Voltage controlled oscillator (VCO) fiVCO(min) fiVCO(max) f fdrift fshift CNRosc minimum input oscillator frequency maximum input oscillator frequency frequency deviation frequency drift frequency shift oscillator carrier-to-noise ratio note 8 VCC = 5% at 10 kHz; note 9 at 100 kHz; note 9 Vosc(p-p) Rsource(osc) required voltage drive level for external oscillator injection (peak-to-peak value) source resistance for external oscillator generator 21.4 - - 100 100 - - - 50 MHz MHz MHz kHz kHz dBc/Hz dBc/Hz mV 300 - - - - - 100 -
85 105 - -
I and Q amplifiers VilQ(p-p) VolQ(p-p) I and Q channel input voltage (peak-to-peak value) I and Q channel output voltage (peak-to-peak value) note 10 note 10 at 1 dB gain compression; note 10 note 11 at 0.5 dB note 12 - - 1.0 0.1 0.5 - - - - V V V
IM3 BIQ ct(IQ) VO(IQ) ZI(IQ) ZO(IQ)
intermodulation distortion in the I and Q channels bandwidth of I and Q amplifiers crosstalk between the I and Q channels DC output voltage level for the I and Q amplifier input impedance of the I and Q channels output impedance of the I and Q channels
40 25 30 - - -
- - - 2.45 10 50
- - - - - -
dB MHz dB V k
Notes to the characteristics 1. Typical supply currents are defined for VCC = 5 V. 2. The I and Q channel output voltages are measured with the following conditions: a) fi(RF) = 12fi(VCO) + 500 kHz (70.5 MHz) b) the higher frequencies (140.5 MHz) are filtered out. V IQ ( rms ) 3. The I and Q channels gain is defined by G IQ = ------------------------ . V iRF ( rms ) The gains are measured with the conditions defined in note 2.
1996 Oct 08
7
Philips Semiconductors
Objective specification
Quadrature demodulator
4. The phase and gain error between the I and Q channel outputs is measured as follows: a) the oscillator is tuned at fi(VCO) = 140 MHz b) a sine wave signal fi(RF) = 12fi(VCO) + 500 kHz (70.5 MHz) is applied at the IF input c) the higher frequencies (140.5 MHz) are filtered out.
TDA8040T
Under these conditions, in each I and Q channel, a sine wave with a frequency of 500 kHz will be present. These sine waves should be 90 degrees out of phase. The phase error is defined as the phase quadrature imbalance between the I and Q channels. The gain error is defined as the gain difference between the I and Q channels. 5. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency band of 25 MHz around fi(RF). The specified tilt is the maximum tilt value found in one of the I or Q channels. 6. The specified noise figure is the maximum value obtained from I and Q channel noise measurement. The noise meter is tuned to 10.7 MHz. 7. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the I and Q channels. Intermodulation is measured with two sine wave signals at fi(RF) = 79 MHz and fi(RF) = 81 MHz with an amplitude of 67 dBV for each tone. The difference in level between the converted carriers (9 MHz and 11 MHz) and the intermodulation products after frequency conversion (7 MHz and 13 MHz) is defined as IM3 (see Fig.3). 8. The temperature for the VCO frequency drift is defined for Tamb = 25 C. It is measured in the application circuit of Fig.10 with the following component values for the tank circuit: a) L1: 22 nH (TOKO NE545BNA5 - 100082) b) C1: 15 pF NP0 c) C2: 33 pF N220 (220 ppm/C) d) C3 and C4: 1 nF e) C5: 3.3 F f) D1 and D2: BB133 g) R1 and R2: 100 k h) R3: 1 k. 9. The phase noise is measured at the oscillator frequency (140 MHz). Due to the frequency divider, the phase noise at the input of the mixers is 6 dB better (111 dBc/Hz at 100 kHz). 10. Output amplifiers are measured separately with an external DC bias applied at pins 9 and 16. The gain is measured for an output signal of 500 mV (p-p) at fi = 500 kHz. 11. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the I and Q output amplifier. Intermodulation is measured with two sine wave signals at fi = 9 MHz and fi = 11 MHz at an output level of 500 mV (p-p) for each tone. 12. The crosstalk between the I and Q amplifiers is defined as the ratio between the wanted output signal and the disturbing signal from the other channel. To measure the crosstalk of the I and Q amplifiers, a sine wave 15 MHz, 0.1 V (p-p) is applied at the I input and a sine wave 15.5 MHz, 0.1 V (p-p) is applied at the Q input. For each output, the difference in level is measured between the 15 MHz and the 15.5 MHz component. This difference is the value of the crosstalk between the I and Q amplifiers.
1996 Oct 08
8
Philips Semiconductors
Objective specification
Quadrature demodulator
TDA8040T
MGE512
handbook, halfpage
IM3
5
7
9
11
13
15 fi (MHz)
Fig.3 IM3 definition.
handbook, halfpage
R2 13 C3 D2 R3 C1 12 C4 R1
MGE513
C2
L1 D1 C5
Vvaricap
Fig.4 Tank circuit.
1996 Oct 08
9
Philips Semiconductors
Objective specification
Quadrature demodulator
INPUT PIN CONFIGURATION
TDA8040T
handbook, halfpage V
1
CC(A)
handbook, halfpage V
1 CC(A)
9,16 10,15
GND(A)
8
MGE514
GND(A)
8
MBE259
Fig.5 Input circuitry VCC(A) to GND(A).
Fig.6 Input circuitry VCC(A) to GND(A).
handbook, halfpage handbook, halfpage
VCC(A)
1
12
13 2,7
GND(V)
11
MGE515
GND(A)
8
MBE261
Fig.7 Input circuitry VCC(V) to GND(V).
Fig.8 Input circuitry VCC(A) to GND(A).
14 handbook, halfpage VCC(V)
4
5
GND(V)
3
MBE262
Fig.9 Input circuitry VCC(V) to GND(V).
1996 Oct 08
10
Philips Semiconductors
Objective specification
Quadrature demodulator
APPLICATION INFORMATION
TDA8040T
handbook, full pagewidth
LOW-PASS FILTER
+5 V
VCC(A) 1
16 Iin 15 Iout
AMP I2 GND(D) 3 AMP VOLTAGE REFERENCE 0 AMP
14 VCC(V)
+5 V
RFin
RF A 4 RF B 5 VCC(D) 6 Q7 GND(A) 8
13 VCOB
/2
90
VCO 12 VCOA
Vvaricap
+5 V
11 GND(V) AMP AMP 10 Qout 9 Qin
TDA8040T
LOW-PASS FILTER
MGE516
Fig.10 Application circuit.
1996 Oct 08
11
Philips Semiconductors
Objective specification
Quadrature demodulator
PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm
TDA8040T
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
0.010 0.057 0.004 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
0.244 0.041 0.228
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-23 97-05-22
1996 Oct 08
12
Philips Semiconductors
Objective specification
Quadrature demodulator
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TDA8040T
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Oct 08
13
Philips Semiconductors
Objective specification
Quadrature demodulator
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA8040T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 08
14
Philips Semiconductors
Objective specification
Quadrature demodulator
NOTES
TDA8040T
1996 Oct 08
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
537021/50/02/pp16
Date of release: 1996 Oct 08
Document order number:
9397 750 01345

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